www.goodark.com page 1 of 6 rev.2.2 ssf 1 0 16 100v n-channel mosfet absolute maximum ratings parameter max. units i d @t c =25? c continuous drain current,vgs@10v 75 i d @t c =100?c continuous drain current,vgs@10v 65 i dm pulsed drain current 300 a power dissipation 273 w p d @t c =25?c linear derating factor 1.5 w/? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 380 mj e ar repetitive avalanche energy tbd mj dv/dt peak diode recovery voltage 31 v/ns t j t stg operating junction and storage temperature range C55 to +175 ?c thermal resistance parameter min. typ. max. units r jc junction-to-case 0.55 r ja junction-to-ambient 62 ?c/w electrical characteristics @t j =25 ?c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 11 16 m v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250a 2 v ds =100v,v gs =0v i dss drain-to-source leakage current 10 a v ds =100v, v gs =0v,t j =150?c i gss gate-to-source forward leakage 100 na v gs =20v SSF1016 top view (t0-220) id =75a bv=100v r ds (on) =16 m (max.) features ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current ? lead free product description the SSF1016 is a new generation of high voltage and low current nCchannel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. SSF1016 is assembled in high reliability and qualified assembly house. applications ? power switching application
www.goodark.com page 2 of 6 rev.2.2 ssf 1 0 16 100v n-channel mosfet gate-to-source reverse leakage -100 v gs =-20v q g total gate charge 90 q gs gate-to-source charge 20 q gd gate-to-drain("miller") charge 31 nc i d =30a,v gs =10v v dd =30v t d(on) turn-on delay time 18.2 t r rise time 15.6 t d(off) turn-off delay time 70.5 t f fall time 13.8 ns v dd =3 0v i d =2a ,r l =15 r g =2.5 v gs =10v c iss input capacitance 3150 c oss output capacitance 350 c rss reverse transfer capacitance 240 pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 75 i sm pulsed source current (body diode) 300 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25?c,i s =60a,v gs =0v t rr reverse recovery time 57 ns q rr reverse recovery charge 107 c t j =25?c,i f =75a di/dt=100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) eas test circuit gate charge test circuit notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 50v,id=37a pulse width300s, duty cycle1.5% ; rg = 25?? starting t j = 25c
www.goodark.com page 3 of 6 rev.2.2 ssf 1 0 16 100v n-channel mosfet switch time test circuit switch waveform
www.goodark.com page 4 of 6 rev.2.2 ssf 1 0 16 100v n-channel mosfet transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature
www.goodark.com page 5 of 6 rev.2.2 ssf 1 0 16 100v n-channel mosfet gate charge source-drain diode forward voltage safe operation area max drain current vs. junction transient thermal impedance curve
www.goodark.com page 6 of 6 rev.2.2 ssf 1 0 16 100v n-channel mosfet to-220 mechanical data
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